ME50P06 Datasheet (Matsuki) - P-Channel MOSFET

ME50P06, P-Channel MOSFET

The ME50P06 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME50P06 Features

* RDS(ON)≦17mΩ@VGS=-10V

* RDS(ON)≦20mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverte