ME50N02 Datasheet (Matsuki) - N-Channel MOSFET

ME50N02, N-Channel MOSFET

The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME50N02 Features

* RDS(ON)≦8mΩ@VGS=10V

* RDS(ON)≦9mΩ@VGS=4.5V

* RDS(ON)≦12mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter Ordering Information: ME50N02 (