ME50N06A Datasheet (Matsuki) - N-Channel MOSFET

ME50N06A, N-Channel MOSFET

The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME50N06A Features

* RDS(ON)≦22mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inverter

* Secondary Synchronou