ME50N06A-G, ME50N06A Datasheet - Matsuki

ME50N06A-G N-Channel MOSFET

The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME50N06A-G Features

* RDS(ON)≦22mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* LCD TV & Monitor Display inverter

* CCFL inverter

* Secondary Synchronou

ME50N06A-Matsuki.pdf

ME50N06A-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME50N06A-G, ME50N06A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME50N06A-G, ME50N06A

Manufacturer:

Matsuki

File Size:

1.14 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME50N06A-G, ME50N06A.
Please refer to the document for exact specifications by model.

ME50N06A-G Distributor

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ME50N06A-G ME50N06A N-Channel MOSFET Matsuki