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ME50N06A-G, ME50N06A N-Channel MOSFET

ME50N06A-G Description

N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL .
The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

ME50N06A-G Features

* RDS(ON)≦22mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME50N06A-G Applications

* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secondary Synchronous Rectification
* The Ordering Information: ME50N06A (Pb-free) ME50N06A-G (Green product-Halogen free) Absolute Maximu(GmreRenaptriondgucst) (TC=25℃ Unless Otherwis

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME50N06A-G, ME50N06A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME50N06A-G, ME50N06A
Manufacturer
Matsuki
File Size
1.14 MB
Datasheet
ME50N06A-Matsuki.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: ME50N06A-G, ME50N06A.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Matsuki
Matsuki ME50N06A-G-like datasheet