Description
N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL .
The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
Features
* RDS(ON)≦22mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management
* DC/DC Converter
* LCD TV & Monitor Display inverter
* CCFL inverter
* Secondary Synchronous Rectification
* The Ordering Information: ME50N06A (Pb-free) ME50N06A-G (Green product-Halogen free)
Absolute Maximu(GmreRenaptriondgucst) (TC=25℃ Unless Otherwis