ME50N02-G, ME50N02 Datasheet - Matsuki

ME50N02-G N-Channel MOSFET

The ME50N02 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME50N02-G Features

* RDS(ON)≦8mΩ@VGS=10V

* RDS(ON)≦9mΩ@VGS=4.5V

* RDS(ON)≦12mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter Ordering Information: ME50N02 (

ME50N02-Matsuki.pdf

ME50N02-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME50N02-G, ME50N02. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME50N02-G, ME50N02

Manufacturer:

Matsuki

File Size:

0.96 MB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME50N02-G, ME50N02.
Please refer to the document for exact specifications by model.

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ME50N02-G ME50N02 N-Channel MOSFET Matsuki

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