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ME50N06A-G - N-Channel MOSFET

This page provides the datasheet information for the ME50N06A-G, a member of the ME50N06A N-Channel MOSFET family.

Datasheet Summary

Description

The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦22mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME50N06A-G

Datasheet Details

Part number ME50N06A-G
Manufacturer Matsuki
File Size 1.14 MB
Description N-Channel MOSFET
Datasheet download datasheet ME50N06A-G Datasheet
Additional preview pages of the ME50N06A-G datasheet.

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Full PDF Text Transcription

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N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
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