Datasheet4U Logo Datasheet4U.com

ME50N10 - N-Channel MOSFET

Datasheet Summary

Description

The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦17mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Datasheet preview – ME50N10

Datasheet Details

Part number ME50N10
Manufacturer Matsuki
File Size 744.38 KB
Description N-Channel MOSFET
Datasheet download datasheet ME50N10 Datasheet
Additional preview pages of the ME50N10 datasheet.

📁 Similar Datasheet

  • ME500810 - Three-Phase Diode Bridge Modules (100 Amperes/800 Volts) (Powerex Powers)
  • ME501206 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501210 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501606 - Three-Phase Diode Bridge Modules (60 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME501610 - Three-Phase Diode Bridge Modules (100 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME54BS01 - Bluetooth LE Module (Minewsemi)
Other Datasheets by Matsuki

Full PDF Text Transcription

Click to expand full text
N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME50N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Published: |