ME50N10T
ME50N10T is N-Channel MOSFET manufactured by Matsuki.
DESCRIPTION
The ME50N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
FEATURES
- RDS(ON)≦30mΩ@VGS=10V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- DC/DC Converter
- Load Switch
- LCD Display inverter
PIN CONFIGURATION
(TO-220) Top View
- The Ordering Information: ME50N10T (Pb-free) ME50N10T-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Currenta
Tc=25℃ TC=70℃
Power Dissipation
TC=25℃ TC=70℃
Operating Junction and Storage Temperature Range
Thermal Resistance-Junction to...
