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ME50N10AT - N-Channel MOSFET

Datasheet Summary

Description

The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦40mΩ@VGS=10V.
  • RDS(ON)≦60mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – ME50N10AT

Datasheet Details

Part number ME50N10AT
Manufacturer Matsuki
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet ME50N10AT Datasheet
Additional preview pages of the ME50N10AT datasheet.

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Full PDF Text Transcription

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ME50N10AT /ME50N10AT-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION FEATURES ● RDS(ON)≦40mΩ@VGS=10V ● RDS(ON)≦60mΩ@VGS=4.
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