MXP1007AT - 100V N-ch Power MOSFET
MXP1007AT Features
* Proprietary New Trench Technology
* RDS(ON),typ.=5.3mΩ@VGS=10V
* Low Gate Charge Minimize Switching Loss
* Fast Recovery Body Diode MXP1007AT BVDSS 100V RDS(ON),max. 7.0mΩ ID[2] 143 Applications
* High efficiency DC/DC Converters
* Synchronous Rectification
* UPS I
