DS1265AB, DS1265Y Datasheet (Maxim Integrated Products)

DS1265AB, DS1265Y, 8M Nonvolatile SRAM

A0 - A19 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+5V) - Ground - No Connect DESCRIPTION The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits.

Each NV S

DS1265AB Features

* 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electrically