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DS1245Y 1024k Nonvolatile SRAM

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Description

19-5638; Rev 11/10 www.maxim-ic.com .
A0 - A16 - Address Inputs DQ0 - DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable VCC GND - Power (+5V) - Ground.

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Features

* 10 years minimum data retention in the absence of external power
* Data is automatically protected during power loss
* Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory
* Unlimited write cycles
* Low-power CMOS
* Read and write access times of 70 ns
* Lithiu

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