DS120002D2 Datasheet, Diode, Sanan

PDF File Details

Part number:

DS120002D2

Manufacturer:

Sanan

File Size:

790.23kb

Download:

📄 Datasheet

Description:

Sic schottky barrier diode. VRRM 1200 V IF(135℃) 3.9 A QC 12 nC TO-252-2L PIN 1 PIN 2 CASE Device SDS120J002D2 Package TO-252-2L Marking DS120002D

TAGS

DS120002D2

Sanan

📁 Related Datasheet

DS120002D3 - SiC Schottky Barrier Diode (Sanan)
Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.

DS120005D3 - SiC Schottky Barrier Diode (Sanan)
Datasheet SDS120J005D3 1200V/5A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.

DS1200 - Serial RAM (Dallas Semiconducotr)
DS1200 Serial RAM Chip .maxim-ic. FEATURES § § § § § § § § § § § § § 1024 Bits of Read/Write Memory Low Data Retention Current for Battery Back.

DS1200-3 - AC-DC / Distributed Power Front-End 1U (Emerson)
Embedded Power for Business-Critical Continuity DS1200 1200 Watts Distributed Power System Distributed Power Bulk Front-End Total Output Power: 1200 .

DS1200-3-002 - AC-DC / Distributed Power Front-End 1U (Emerson)
Embedded Power for Business-Critical Continuity DS1200 1200 Watts Distributed Power System Distributed Power Bulk Front-End Total Output Power: 1200 .

DS1200-3-005 - AC-DC / Distributed Power Front-End 1U (Emerson)
Embedded Power for Business-Critical Continuity DS1200 1200 Watts Distributed Power System Distributed Power Bulk Front-End Total Output Power: 1200 .

DS120010D3 - SiC Schottky Barrier Diode (Sanan)
Datasheet SDS120J010D3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tem.

DS120010E3 - SiC Schottky Barrier Diode (Sanan)
Datasheet SDS120J010E3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tem.

DS120010G3 - SiC Schottky Barrier Diode (Sanan)
Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.

DS120010H3 - SiC Schottky Barrier Diode (Sanan)
Datasheet 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-indepen.