DS120010E3 Datasheet PDF (SiC Schottky Barrier Diode)

DS120010E3 - SiC Schottky Barrier Diode

Description

VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Sur

Datasheet Details

Part number	DS120010E3
Manufacturer	Sanan
File Size	503.57 KB
Description	SiC Schottky Barrier Diode
Datasheet	DS120010E3 Datasheet
Additional preview pages of the DS120010E3 datasheet.

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Full PDF Text Transcription

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Datasheet SDS120J010E3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile Device SDS120J010E3 Package TO-263-2L Product Description VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM

Published: Nov 4, 2024 |