DS120010E3 Datasheet - Sanan

DS120010E3 SiC Schottky Barrier Diode

VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Sur.

Datasheet SDS120J010E3 1200V/10A SiC Schottky Barrier Diode Characteristic Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low heat dissipation requirements Application Switching power supply Power factor correction Motor drive，traction Charging pile Device SDS120J010E3 Package TO-263-2L Product Descr.

DS120010E3 Datasheet (503.57 KB)