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DS120010E3 - SiC Schottky Barrier Diode

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Part number DS120010E3
Manufacturer Sanan
File Size 503.57 KB
Description SiC Schottky Barrier Diode
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VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 37 17 10 103 57 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Puls

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