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DS120010H3 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-247-2L Device SDS120J010H3 Package TO-247-2L Marking DS120010H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous

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Datasheet Details

Part number DS120010H3
Manufacturer Sanan
File Size 456.95 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120010H3 Datasheet

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Datasheet 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile SDS120J010H3 Product Description VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-247-2L Device SDS120J010H3 Package TO-247-2L Marking DS120010H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200