Datasheet Details
| Part number | DS120010H3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 456.95 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010H3-Sanan.pdf |
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Overview: Datasheet 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low.
| Part number | DS120010H3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 456.95 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010H3-Sanan.pdf |
|
|
|
VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-247-2L Device SDS120J010H3 Package TO-247-2L Marking DS120010H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 36 17 10 103 57 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature Mounting Torque PTOT ∫i2dt Tj Tstg M 180 53 -55~175 -55~175 1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J010H3 1 /4 Rev.
1.0.1 2023.02 Datasheet SDS120J010H3 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.
/ Values Typ.
| Part Number | Description |
|---|---|
| DS120010D3 | SiC Schottky Barrier Diode |
| DS120010E3 | SiC Schottky Barrier Diode |
| DS120010G3 | SiC Schottky Barrier Diode |
| DS120015H3 | SiC Schottky Barrier Diode |
| DS120002D2 | SiC Schottky Barrier Diode |
| DS120002D3 | SiC Schottky Barrier Diode |
| DS120005D3 | SiC Schottky Barrier Diode |
| DS120020G2 | SiC Schottky Barrier Diode |
| DS120020G3 | SiC Schottky Barrier Diode |
| DS120020H2 | SiC Schottky Barrier Diode |