DS120010H3
DS120010H3 is SiC Schottky Barrier Diode manufactured by Sanan.
1200V/10A
Si C Schottky Barrier Diode Characteristic
- Zero Reverse Recovery Current
- Positive temperature coefficient
- Temperature-independent performance
- High-speed switching
- Low switching loss
- Low heat dissipation requirements
Application
- Switching power supply
- Power factor correction
- Motor drive，traction
- Charging pile
SDS120J010H3
Product Description
VRRM
IF(135℃)
55 n C
TO-247-2L
Device SDS120J010H3
Package TO-247-2L
Marking...
