Datasheet Details
| Part number | DS120010E3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 503.57 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010E3-Sanan.pdf |
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Overview: Datasheet SDS120J010E3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.
| Part number | DS120010E3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 503.57 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010E3-Sanan.pdf |
|
|
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VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 37 17 10 103 57 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature PTOT ∫i2dt Tj Tstg 187 53 -55~175 -55~175 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ SDS120J010E3 1 /4 Rev.
1.0.2 2023.02 Datasheet SDS120J010E3 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.
/ Values Typ.
| Part Number | Description |
|---|---|
| DS120010D3 | SiC Schottky Barrier Diode |
| DS120010G3 | SiC Schottky Barrier Diode |
| DS120010H3 | SiC Schottky Barrier Diode |
| DS120015H3 | SiC Schottky Barrier Diode |
| DS120002D2 | SiC Schottky Barrier Diode |
| DS120002D3 | SiC Schottky Barrier Diode |
| DS120005D3 | SiC Schottky Barrier Diode |
| DS120020G2 | SiC Schottky Barrier Diode |
| DS120020G3 | SiC Schottky Barrier Diode |
| DS120020H2 | SiC Schottky Barrier Diode |