DS120010E3
DS120010E3 is SiC Schottky Barrier Diode manufactured by Sanan.
SDS120J010E3
1200V/10A Si C Schottky Barrier Diode
Characteristic
- Zero Reverse Recovery Current
- Positive temperature coefficient
- Temperature-independent performance
- High-speed switching
- Low switching loss
- Low heat dissipation requirements
Application
- Switching power supply
- Power factor correction
- Motor drive，traction
- Charging pile
Device SDS120J010E3
Package TO-263-2L
Product Description
VRRM
IF(135℃)
55 n C
TO-263-2L
PIN 1 CASE
PIN 2
Marking...
