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DS120010E3 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Sur

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Datasheet Details

Part number DS120010E3
Manufacturer Sanan
File Size 503.57 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120010E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet SDS120J010E3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS120J010E3 Package TO-263-2L Product Description VRRM 1200 V IF(135℃) 17 A QC 55 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS120010E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM