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DS120015H3 Datasheet Sic Schottky Barrier Diode

Manufacturer: Sanan

Overview: Datasheet 1200V/15A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low.

Datasheet Details

Part number DS120015H3
Manufacturer Sanan
File Size 311.88 KB
Description SiC Schottky Barrier Diode
Datasheet DS120015H3-Sanan.pdf

General Description

VRRM 1200 V IF(135℃) 23 A QC 82 nC TO-247-2L Device SDS120J015H3 Package TO-247-2L Marking DS120015H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 51 23 15 140 90 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature Mounting Torque PTOT ∫i2dt Tj Tstg M 234 98 -55~175 -55~175 1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J015H3 1 /4 Rev.

1.0.1 2023.02 Datasheet SDS120J015H3 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.

/ Values Typ.

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