Datasheet Details
| Part number | DS120002D2 |
|---|---|
| Manufacturer | Sanan |
| File Size | 790.23 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120002D2-Sanan.pdf |
|
|
Overview: Datasheet 1200V/2A SiC Schottky Barrier Diode Characteristic Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low.
| Part number | DS120002D2 |
|---|---|
| Manufacturer | Sanan |
| File Size | 790.23 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120002D2-Sanan.pdf |
|
|
|
VRRM 1200 V IF(135℃) 3.9 A QC 12 nC TO-252-2L PIN 1 PIN 2 CASE Device SDS120J002D2 Package TO-252-2L Marking DS120002D2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 8.5 3.9 2 27 16 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature PTOT ∫i2dt Tj Tstg 52 3.65 -55~175 -55~175 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ SDS120J002D2 1/4 Rev.
1.0.0 2022.01 Datasheet SDS120J002D2 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.
/ Values Typ.
| Part Number | Description |
|---|---|
| DS120002D3 | SiC Schottky Barrier Diode |
| DS120005D3 | SiC Schottky Barrier Diode |
| DS120010D3 | SiC Schottky Barrier Diode |
| DS120010E3 | SiC Schottky Barrier Diode |
| DS120010G3 | SiC Schottky Barrier Diode |
| DS120010H3 | SiC Schottky Barrier Diode |
| DS120015H3 | SiC Schottky Barrier Diode |
| DS120020G2 | SiC Schottky Barrier Diode |
| DS120020G3 | SiC Schottky Barrier Diode |
| DS120020H2 | SiC Schottky Barrier Diode |