DS120010G3
DS120010G3 is SiC Schottky Barrier Diode manufactured by Sanan.
SDS120J010G3
1200V/10A
Si C Schottky Barrier Diode
Characteristic
- Zero Reverse Recovery Current
- Positive temperature coefficient
- Temperature-independent performance
- High-speed switching
- Low switching loss
- Low heat dissipation requirements
Application
- Switching power supply
- Power factor correction
- Motor drive，traction
- Charging pile
Product Description
VRRM
IF(135℃)
20-
- A
28- n C
TO-247-3L
Device SDS120J010G3
Package TO-247-3L
Marking...
