Datasheet Details
| Part number | DS120010G3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 322.17 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010G3-Sanan.pdf |
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Overview: Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.
| Part number | DS120010G3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 322.17 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120010G3-Sanan.pdf |
|
|
|
VRRM 1200 V IF(135℃) 20** A QC 28* nC TO-247-3L Device SDS120J010G3 Package TO-247-3L Marking DS120010G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipation i2t value Operating temperature storage temperature Mounting Torque VRRM VRSM VDC IF IFSM IFRM PTOT ∫i2dt Tj Tstg M 1200 1200 1200 20/40 10/20 5/10 55* 40* 113* 15* -55~175 -55~175 1 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J010G3 1 /4 Rev.
1.0.1 2023.02 Datasheet SDS120J010G3 Thermal Characteristics Parameter Symbol Thermal resistance Rth(j-c) ** Per device * Per leg Min.
/ Values Typ.
| Part Number | Description |
|---|---|
| DS120010D3 | SiC Schottky Barrier Diode |
| DS120010E3 | SiC Schottky Barrier Diode |
| DS120010H3 | SiC Schottky Barrier Diode |
| DS120015H3 | SiC Schottky Barrier Diode |
| DS120002D2 | SiC Schottky Barrier Diode |
| DS120002D3 | SiC Schottky Barrier Diode |
| DS120005D3 | SiC Schottky Barrier Diode |
| DS120020G2 | SiC Schottky Barrier Diode |
| DS120020G3 | SiC Schottky Barrier Diode |
| DS120020H2 | SiC Schottky Barrier Diode |