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DS120010G3 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 20 A QC 28 nC TO-247-3L Device SDS120J010G3 Package TO-247-3L Marking DS120010G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous f

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Datasheet Details

Part number DS120010G3
Manufacturer Sanan
File Size 322.17 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120010G3 Datasheet

Full PDF Text Transcription (Reference)

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Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Product Description VRRM 1200 V IF(135℃) 20** A QC 28* nC TO-247-3L Device SDS120J010G3 Package TO-247-3L Marking DS120010G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipat