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DS120002D3 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 5.4 A QC 12 nC TO-252-2L PIN 1 PIN 2 CASE Marking DS120002D3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF

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Datasheet Details

Part number DS120002D3
Manufacturer Sanan
File Size 322.12 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet DS120002D3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS120J002D3 Package TO-252-2L Product Description VRRM 1200 V IF(135℃) 5.