Datasheet Details
| Part number | DS120002D3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 322.12 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120002D3-Sanan.pdf |
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Overview: Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.
| Part number | DS120002D3 |
|---|---|
| Manufacturer | Sanan |
| File Size | 322.12 KB |
| Description | SiC Schottky Barrier Diode |
| Datasheet | DS120002D3-Sanan.pdf |
|
|
|
VRRM 1200 V IF(135℃) 5.4 A QC 12 nC TO-252-2L PIN 1 PIN 2 CASE Marking DS120002D3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 1200 1200 11 5.4 2 28 23 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =155℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 Total power dissipation i2t value Operating temperature storage temperature PTOT ∫i2dt Tj Tstg 87 3.9 -55~175 -55~175 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ SDS120J002D3 1 /4 Rev.
1.0.2 2023.02 Datasheet SDS120J002D3 Thermal Characteristics Parameter Thermal resistance Symbol Rth(j-c) Min.
/ Values Typ.
| Part Number | Description |
|---|---|
| DS120002D2 | SiC Schottky Barrier Diode |
| DS120005D3 | SiC Schottky Barrier Diode |
| DS120010D3 | SiC Schottky Barrier Diode |
| DS120010E3 | SiC Schottky Barrier Diode |
| DS120010G3 | SiC Schottky Barrier Diode |
| DS120010H3 | SiC Schottky Barrier Diode |
| DS120015H3 | SiC Schottky Barrier Diode |
| DS120020G2 | SiC Schottky Barrier Diode |
| DS120020G3 | SiC Schottky Barrier Diode |
| DS120020H2 | SiC Schottky Barrier Diode |