APT44GA60BD30C Datasheet (Micrel Semiconductor)

APT44GA60BD30C, High Speed PT IGBT

APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.

Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes.

A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies.

Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive.

The intr

APT44GA60BD30C Features

* Fast switching with low EMI

* Very Low Eoff for maximum efﬁciency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS