* Fast switching with low EMI
* Very Low Eoff for maximum efficiency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI
* RoHS compliant TYPICAL APPLICATIONS
APT44GA60SD30C Datasheet (244.79 KB)
APT44GA60SD30C
Micrel Semiconductor
244.79 KB
High speed pt igbt.
APT44GA60BD30C www.DataSheet4U.com APT44GA60SD30C
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO A.
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