2N3020
Micro Electronics
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Npn silicon transistor.
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2N3020 - NPN Transistor
(Motorola)
30 19 2N
(SILICON)
2N3020
CASE 31
(TO·S)
Collector connected to case
NPN silicon annular transistors designed for highcurrent, high-frequency ampl.
2N3020 - NPN Transistor
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2N3019 2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon.
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NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for.
2N3020 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS
(CDIL)
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019 2N3020
TO-39 Metal Can.
2N3020 - Bipolar NPN Device
(Seme LAB)
2N3020
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0..
2N3021 - PNP silicon power transistors
(Motorola)
2N3021 thru 2N3026 (SILICON)
CASE1~ (TO·3)
~
PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed.
2N3021 - PNP Transistor
(SSDI)
3 - 3.5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiE.
2N3022 - PNP silicon power transistors
(Motorola)
2N3021 thru 2N3026 (SILICON)
CASE1~ (TO·3)
~
PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed.
2N3022 - PNP Transistor
(SSDI)
3 - 3.5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiE.
2N3023 - PNP silicon power transistors
(Motorola)
2N3021 thru 2N3026 (SILICON)
CASE1~ (TO·3)
~
PNP silicon power transistors for Class C power amplifiers, high-current core switching and high-speed.
