23A512
415.32kb
512kbit spi serial sram. The Microchip Technology Inc. 23A512/23LC512 are 512-Kbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral
TAGS
📁 Related Datasheet
23A1024 - 1Mbit SPI Serial SRAM
(Microchip)
23A1024/23LC1024
1-Mbit SPI Serial SRAM with SDI and SQI Interface
Device Selection Table
Part Number
VCC Range
23A1024
1.7V-2.2V
23LC1024
2.5.
23A256 - 256-Kbit SPI Bus Low-Power Serial SRAM
(Microchip)
23A256/23K256
256-Kbit SPI Bus Low-Power Serial SRAM
Device Selection Table
Part Number
VCC Range
23K256 23A256
2.7V-3.6V 1.5V-1.95V
Page Size 3.
23A640 - 64-Kbit SPI Bus Low-Power Serial SRAM
(Microchip)
23A640/23K640
64-Kbit SPI Bus Low-Power Serial SRAM
Device Selection Table
Part Number
VCC Range
23K640 23A640
2.7V-3.6V 1.5V-1.95V
Page Size 3.
230-JC6DT3 - DIESEL ENGINE-GENERATOR SET
(MTU Onsite Energy)
A tognum Group Brand
DIESEL ENGINE-GENERATOR SET 230-JC6DT3 230 ekW 60 Hz Standby
/ / 195 ekW / 60 Hz / Prime
208 - 600V
System Ratings
Stand.
230-JS6DT3 - DIESEL ENGINE-GENERATOR SET
(MTU Onsite Energy)
A tognum Group Brand
Diesel Engine-Generator Set 230-JS6DT3 230 ekW 60 Hz Standby
/ /
208 - 600V
System Ratings
Standby
Voltage (L-L) Phase .
2300 - 100 pin Strip Header
(3M)
.
2300F - N-Channel MOSFET
(GOFORD)
GOFORD
2300F
Description
The 2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and.
2301 - P-Channel Enhancement Mode Power MOSFET
(GFD)
GOFORD
2301
DESCRIPTION
The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
2301-RC - High Current Toroid Inductors
(Bourns)
†RoHS COMPLIANT
High Current Toroid Inductors
Special Features
• DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.
2301H - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as.
