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MSC080SMA120J N-Channel Power MOSFET

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Description

1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120J Product Overview 1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (Si.

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Features

* Low capacitances and low gate charge
* Fast switching speed due to low internal gate resistance (ESR)
* Stable operation at high junction temperature, TJ(max) = 175 °C
* Fast and reliable body diode
* Superior avalanche ruggedness
* RoHS compliant

Applications

* Photovoltaic (PV) inverter, converter, and industrial motor drives
* Smart grid transmission and distribution
* Induction heating and welding
* Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
* Power supply and distribution Data S

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