MSC080SMA120J Description
1200V, 80 mΩ N-Channel mSiC™ MOSFET MSC080SMA120J Product Overview 1200V, 80 mΩ typical at VGS = 20V, 90 mΩ typical at VGS = 18V, Silicon Carbide (SiC) N-Channel MOSFET, SOT-227. 4 3 2 1 DRAIN (TERMINAL 2) GATE (TERMINAL 1) SOURCE (TERMINALS 3,.
MSC080SMA120J Key Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, TJ(max) = 175 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS pliant
- Isolated voltage to 2500V, UL certified file E145592 Benefits
- High efficiency to enable lighter and more pact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses