MSC080SMA330B4 Datasheet | Microchip Technology

Overview The silicon carbide (Si C) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC080SMA330B4 device is a 3300 V, 80 mΩ Si C MOSFET in a TO-247 4-lead package with a source sense. Features The following are key features of the MSC080SMA330B4 device: - Low capacitances and low gate charge - Fast switching speed due to low internal gate resistance (ESR) - Stable operation at high junction temperature, TJ(max) = 150 °C - Fast and reliable body diode - Superior avalanche ruggedness - Ro HS pliant Benefits The following are benefits of the MSC080SMA330B4 device: - High efficiency to enable lighter, more pact system - Simple to drive and easy to parallel - Improved thermal capabilities and lower switching losses - Eliminates the need for external freewheeling diode - Lower system cost of ownership Applications The MSC080SMA330B4 device is designed for the following applications: - PV inverter, converter, and industrial motor drives - Smart grid transmission and distribution - Induction heating and welding - H/EV powertrain and EV charger - Power supply and distribution © 2022 Microchip Technology Inc. and its subsidiaries DS-00004397A-page 1 Device Specifications 1. Device Specifications This section shows the specifications of the MSC080SMA330B4 device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC080SMA330B4 device. Table 1-1. Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD Parameter Drain source voltage Continuous drain current at TC = 25 °C Continuous drain current at TC = 100 °C Pulsed drain current1 Gate-source voltage Total power dissipation at TC = 25 °C Linear derating factor Ratings 3300 41 26 100 23 to - 10 381 3.04 Unit V A V W W/°C Note:  1. Repetitive rating: pulse width and case temperature limited by maximum junction...