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TN0106

N-Channel Vertical DMOS FET

TN0106 Features

* 2V Maximum Low Threshold

* High Input Impedance

* 50 pF Typical Low Input Capacitance

* Fast Switching Speeds

* Low On-Resistance

* Free from Secondary Breakdown

* Low Input and Output Leakage Applications

* Logic-Level Interfaces (Id

TN0106 General Description

The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur.

TN0106 Datasheet (759.56 KB)

Preview of TN0106 PDF

Datasheet Details

Part number:

TN0106

Manufacturer:

Microchip ↗

File Size:

759.56 KB

Description:

N-channel vertical dmos fet.

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TAGS

TN0106 N-Channel Vertical DMOS FET Microchip

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