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TN0106 N-Channel Vertical DMOS FET

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Description

TN0106 N-Channel Enhancement-Mode Vertical DMOS FET .
The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing proces.

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Features

* 2V Maximum Low Threshold
* High Input Impedance
* 50 pF Typical Low Input Capacitance
* Fast Switching Speeds
* Low On-Resistance
* Free from Secondary Breakdown

Applications

* Logic-Level Interfaces (Ideal for TTL and CMOS)
* Solid-State Relays
* Battery-Operated Systems
* Photovoltaic Drives
* Analog Switches
* General Purpose Line Drivers

TN0106 Distributors

📁 Related Datasheet

TN0102 TN0104 TN0110 TN01A TN01L TN0200K

📌 All Tags

TN0106 N-Channel Vertical DMOS FET Microchip
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