TN0106 Datasheet (Microchip) - N-Channel Vertical DMOS FET

TN0106, N-Channel Vertical DMOS FET

The TN0106 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur

TN0106 Features

* 2V Maximum Low Threshold

* High Input Impedance

* 50 pF Typical Low Input Capacitance

* Fast Switching Speeds

* Low On-Resistance

* Free from Secondary Breakdown

* Low Input and Output Leakage Applications

* Logic-Level Interfaces (Id