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TN0110

N-Channel Enhancement-Mode Vertical DMOS FETs

TN0110 Features

* Low threshold - 2.0V max.

* High input impedance

* Low input capacitance - 50pF typical

* Fast switching speeds

* Low on-resistance

* Free from secondary breakdown

* Low input and output leakage Applications

* Logic level inte

TN0110 General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive t.

TN0110 Datasheet (343.78 KB)

Preview of TN0110 PDF

Datasheet Details

Part number:

TN0110

Manufacturer:

Supertex Inc

File Size:

343.78 KB

Description:

N-channel enhancement-mode vertical dmos fets.

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TAGS

TN0110 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc

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