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TN0606 - N-Channel Enhancement-Mode Vertical DMOS FETs

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Low threshold - 2.0V max.
  • High input impedance.
  • Low input capacitance - 100pF typical.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet preview – TN0606

Datasheet Details

Part number TN0606
Manufacturer Supertex Inc
File Size 336.84 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN0606 Datasheet
Additional preview pages of the TN0606 datasheet.

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Full PDF Text Transcription

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Supertex inc. TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold - 2.0V max. ►► High input impedance ►► Low input capacitance - 100pF typical ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Logic level interfaces – ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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