TN0606 Datasheet (Supertex Inc) - N-Channel Enhancement-Mode Vertical DMOS FETs

TN0606, N-Channel Enhancement-Mode Vertical DMOS FETs

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive t

TN0606 Features

* Low threshold - 2.0V max.

* High input impedance

* Low input capacitance - 100pF typical

* Fast switching speeds

* Low on-resistance

* Free from secondary breakdown

* Low input and output leakage Applications

* Logic level int