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TN0702 - N-Channel Enhancement-Mode Vertical DMOS FETs

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Low threshold - 1.6V max.
  • High input impedance.
  • Low input capacitance - 130pF typical.
  • Fast switching speeds.
  • Low on-resistance guaranteed at VGS = 2, 3, and 5V.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet Details

Part number TN0702
Manufacturer Supertex Inc
File Size 339.90 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
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Full PDF Text Transcription

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Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold - 1.6V max. ►► High input impedance ►► Low input capacitance - 130pF typical ►► Fast switching speeds ►► Low on-resistance guaranteed at VGS = 2, 3, and 5V ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Logic level interfaces – ideal for TTL and CMOS ►► Solid state relays ►► Battery operated systems ►► Photo voltaic drives ►► Analog switches ►► General purpose line drivers ►► Telecom switches General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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