Datasheet Summary
N-Channel Enhancement-Mode Vertical DMOS FET
Features
- 1.6V Maximum Low Threshold
- High Input Impedance
- 130 pF Typical Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance Guaranteed at VGS = 2V, 3V and 5V
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Logic-Level Interfaces (Ideal for TTL and CMOS)
- Solid-State Relays
- Battery-Operated Systems
- Photovoltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telemunication Switches
General Description
The TN0702 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This bination...
