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TN0106 N-Channel Enhancement-Mode Vertical DMOS FETs

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Description

Supertex inc.TN0106 N-Channel Enhancement-Mode Vertical DMOS FET .
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturi.

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Datasheet Specifications

Part number
TN0106
Manufacturer
Supertex Inc
File Size
336.76 KB
Datasheet
TN0106_SupertexInc.pdf
Description
N-Channel Enhancement-Mode Vertical DMOS FETs

Features

* Low threshold - 2.0V max.
* High input impedance
* Low input capacitance - 50pF typical
* Fast switching speeds
* Low on-resistance
* Free from secondary breakdown

Applications

* Logic level interfaces
* ideal for TTL and CMOS
* Solid state relays
* Battery operated systems
* Photo voltaic drives
* Analog switches
* General purpose line drivers

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