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TN0110

N-Channel Vertical DMOS FET

TN0110 Features

* 2V Maximum Low Threshold

* High Input Impedance

* 50 pF Typical Low Input Capacitance

* Fast Switching Speeds

* Low On-Resistance

* Free from Secondary Breakdown

* Low Input and Output Leakage Applications

* Logic-Level Interfaces (Id

TN0110 General Description

The TN0110 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperatur.

TN0110 Datasheet (754.36 KB)

Preview of TN0110 PDF

Datasheet Details

Part number:

TN0110

Manufacturer:

Microchip ↗

File Size:

754.36 KB

Description:

N-channel vertical dmos fet.

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TAGS

TN0110 N-Channel Vertical DMOS FET Microchip

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