Description
.U 4 t ™ e 8Mb SYNCBURST e h SRAM S a t a D ..
The Micron® SyncBurst™ SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Features
* w w w
m o c
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P
3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect
* Fast clock and OE# access times
* Single +3.3V +0.3V/-0.165V pow
Applications
* 100-pin TQFP package
* 165-pin FBGA package
* Low capacitive bus loading
* x18, x32, and x36 versions available
100-Pin TQFP1
OPTIONS
* Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz
* Configurations 3.3V I/O 512K
