Description
™ t e 8Mb SYNCBURST e h SRAMS 4U .m o c 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L25.
The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process.
Features
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Fast clock and OE# access times Single +3.3V +0.3V/-0.165V power supply (VDD) Separate +3.3V isolated output buffer supply (VDDQ) SNOOZE MO
Applications
* 100-pin TQFP package 165-pin FBGA package Low capacitive bus loading x18, x32, and x36 versions available
100-Pin TQFP
* OPTIONS
* Timing (Access/Cycle/MHz) 3.5ns/6ns/166 MHz 4.0ns/7.5ns/133 MHz 5ns/10ns/100 MHz
* Configurations 512K x 18 256K x 32 256K x 36
MARKING
