EDB4432BBPA
Micron Technology
2.14MB
Mobile lpddr2 sdram.
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EDB4432BBBJ - Embedded LPDDR2 SDRAM
(Micron Technology)
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EDB4416BBBH - Embedded LPDDR2 SDRAM
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EDB4064B3PB - 4G bits DDR2 Mobile RAM
(Elpida)
DATA SHEET
4G bits DDR2 Mobile RAM™ PoP (12mm × 12mm, 216-ball FBGA)
EDB4064B3PB
Specifications
• Density: 4G bits • Organization — 2 pieces of 2Gb .
EDB4064B4 - Embedded LPDDR2 SDRAM
(Micron)
Embedded LPDDR2 SDRAM Features
Embedded LPDDR2 SDRAM
EDB1316BD, EDB1332BD, EDB2432B4, EDB4064B4
Features
• Ultra low-voltage core and I/O power supp.
EDB101 - Silicon Bridge Rectifiers
(LGE)
Features
Rating to 400V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded L.
EDB101 - SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
(DIYI)
EDB101 THRU EDB105
SINGLE PHASE 1.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass passivated die construction · Low forward vo.
EDB101 - GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB101 THRU EDB106
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50.
EDB101 - SILICON BRIDGE RECTIFIERS
(GME)
Production specification
SILICON BRIDGE RECTIFIERS
EDB101--EDB106
SFEATURES
z Rating to 1000V PRVP z Surge overload rating to 30 Amperes peak z Id.
EDB101S - SINGLE PHASE 1.0AMP GLASS PASSIVATED BRIDGE RECTIFIER
(ETC)
EDB101S THRU EDB105S
SINGLE PHASE 1.0AMP GLASS PASSIVATED BRIDGE RECTIFIER
Features · Glass passivated die construction · Low forward voltage drop ·.
EDB101S - SILICON BRIDGE RECTIFIERS
(GME)
Production specification
SILICON BRIDGE RECTIFIERS
EDB101S--EDB106S
SFEATURES
z Rating to 1000V PRVP z Surge overload rating to 30 Amperes peak z .