Description
TwinDie™ 1.35V DDR3L SDRAM
MT41K2G4
128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8
64 Meg x 8 x 8 Banks x 2 Ranks Description
The 8Gb (TwinDie™) DDR3L SDRAM (1.35V) uses Micron’s 4Gb DDR3L SDRAM die (essentially two ranks of the 4Gb DDR3L SDRAM).Refer to Micron’s 4Gb DDR3 SDRAM data sheet for the specifications not included in this document.Specifications for base part number MT41K1G4 correlate to TwinDie manufacturing part number MT41K2G4; specifications for base part number MT
Features
- Uses 4Gb Micron die.
- Two ranks (includes dual CS#, ODT, CKE, and ZQ balls).
- Each rank has eight internal banks for concurrent operation.
- VDD = V DDQ = 1.35V (1.283.
- 1.45V); backward compatible to V DD = V DDQ = 1.5V ±0.075V.
- 1.35V center-terminated push/pull I/O.
- JEDEC-standard ball-out.
- Low-profile package.
- TC of 0°C to 95°C.
- 0°C to 85°C: 8192 refresh cycles in 64ms.
- 85°C to 95°C: 8192 refresh cycl.