MT58V512V36D
Micron Technology
526.57kb
(mt58xxxx) 16mb syncburst sram. The Micron® SyncBurst™ SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. Micr
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MT58V512V32D - (MT58xxxx) 16Mb SYNCBURST SRAM
(Micron Technology)
ADVANCE
16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM
16Mb SYNCBURST™ SRAM
FEATURES
• Fast clock and OE# access times • Single +3.3V .
MT5815 - A High Efficiency Wireless Power Transmitter
(Maxic Technology)
Maximizing IC Performance
MT5815
A High Efficiency Wireless Power Transmitter
1 DESCRIPTION
The MT5815 is a System on Chip (SoC) for magnetic induct.
MT5853 - P-Channel Power MOSFET
(MOS-TECH)
Mos-TechSemiconductorCo.,LTD.
P‐Channel Enhancement Mode Field Effect Transistor
MT5853
with Schottky Diode .
MT5853B - P-Channel Power MOSFET
(MOS-TECH)
Mos-TechSemiconductorCo.,LTD.
P‐Channel Enhancement Mode Field Effect Transistor
MT5853%
with Schottky Diode .
MT58C1289 - 128K x 9 SRAM
(Micron)
MIC:RON
1-· ' ~ ,
MT58C1289
128K x 9 SYNCHRONOUS SRAM
SYNCHRONOUS SRAM
FEATURES
• Timing specific to SPARC microprocessor • Fast cycle times: 12,.
MT58L128L18D - (MT58LxxxLxxD) 2Mb SRAM
(Micron Semiconductor)
m o .c U 4 t ™ e 2Mb SYNCBURST e h SRAM S a t a D . FEATURES w w w
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBUR.
MT58L128L18F - (MT58LxxxLxxF) 2Mb SRAM
(Micron Semiconductor)
m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST.
MT58L128L18P - (MT58LxxxxP) 2Mb SRAM
(Micron Semiconductor)
m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D FEATURES . w w w
NOT RECOMENDED FOR NEW DESIGNS
2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBUR.
MT58L128L32D1 - (MT58LxxxLxxD1) 4Mb SRAM
(Micron Technology)
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MT58L128L32F1 - (MT58LxxxLxxF1) 4Mb SRAM
(Micron Technology)
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