* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* DFN3X2‐8L package NOTE：The MT5853B is available in a lead-free package VDSS ‐20V PRODUCT SUMMARY ID RDS(ON) (mΩ) Typ 105@ VGS=‐4.5V ‐3.6A 12
MT5853B
MOS-TECH
528.71 KB
P-channel power mosfet.
Mos-TechSemiconductorCo.,LTD. P‐Channel Enhancement Mode Field Effect Transistor MT5853% with Schottky Diode .
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