* Super high dense cell design for low RDS(ON)
* Rugged and reliable
* Simple drive requirement
* DFN3X2‐8L package NOTE：The MT5853B is available in a lead-free package VDSS ‐20V PRODUCT SUMMARY ID RDS(ON) (mΩ) Typ 105@ VGS=‐4.5V ‐3.6A 12
MT5853B
MOS-TECH
528.71 KB
P-channel power mosfet.
Mos-TechSemiconductorCo.,LTD.
P‐Channel Enhancement Mode Field Effect Transistor
MT5853%
with Schottky Diode .
📁 Related Datasheet
MT5853 - P-Channel Power MOSFET
(MOS-TECH)
Mos-TechSemiconductorCo.,LTD.
P‐Channel Enhancement Mode Field Effect Transistor
MT5853
with Schottky Diode .
MT5815 - A High Efficiency Wireless Power Transmitter
(Maxic Technology)
Maximizing IC Performance
MT5815
A High Efficiency Wireless Power Transmitter
1 DESCRIPTION
The MT5815 is a System on Chip (SoC) for magnetic induct.
MT58C1289 - 128K x 9 SRAM
(Micron)
MIC:RON
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MT58C1289
128K x 9 SYNCHRONOUS SRAM
SYNCHRONOUS SRAM
FEATURES
• Timing specific to SPARC microprocessor • Fast cycle times: 12,.
MT58L128L18D - (MT58LxxxLxxD) 2Mb SRAM
(Micron Semiconductor)
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MT58L128L18F - (MT58LxxxLxxF) 2Mb SRAM
(Micron Semiconductor)
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MT58L128L18P - (MT58LxxxxP) 2Mb SRAM
(Micron Semiconductor)
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MT58L128L32D1 - (MT58LxxxLxxD1) 4Mb SRAM
(Micron Technology)
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