236 Datasheet, Drivers, Micronetics Inc

PDF File Details

Part number:

236

Manufacturer:

Micronetics Inc

File Size:

339.01kb

Download:

📄 Datasheet

Description:

Pin switch drivers.

TAGS

236

Micronetics Inc

📁 Related Datasheet

230-JC6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand DIESEL ENGINE-GENERATOR SET 230-JC6DT3 230 ekW  60 Hz  Standby /  /  195 ekW / 60 Hz / Prime 208 - 600V System Ratings Stand.

230-JS6DT3 - DIESEL ENGINE-GENERATOR SET (MTU Onsite Energy)
A tognum Group Brand Diesel Engine-Generator Set 230-JS6DT3 230 ekW  60 Hz  Standby /  /  208 - 600V System Ratings Standby Voltage (L-L) Phase .

2300 - 100 pin Strip Header (3M)
.

2300F - N-Channel MOSFET (GOFORD)
GOFORD 2300F Description The 2300F designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and.

2301 - P-Channel Enhancement Mode Power MOSFET (GFD)
GOFORD 2301 DESCRIPTION The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.

2301-RC - High Current Toroid Inductors (Bourns)
†RoHS COMPLIANT High Current Toroid Inductors Special Features • DC/DC converter, EMI filter applications • Low radiation • Low core loss • High curr.

2301H - N-Channel MOSFET (GOFORD)
GOFORD DESCRIPTION The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as.

2302 - Class C Microwave (ETC)
2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF.

2302 - N-Channel MOSFET (ETC)
SOT-23-3 Plastic-Encapsulate Transistors 2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHB MAXIMUM RATINGS (TA=25℃ unless otherwi.

2302 - N-Channel Enhancement Mode Power MOSFET (GFD)
2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and o.