2N5031 Datasheet - Microsemi Corporation

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2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.

2N5031_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

2N5031

Manufacturer:

Microsemi ↗ Corporation

File Size:

83.37 KB

Description:

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features

* Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain

Applications

* targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA =

2N5031 Distributors

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2N5031 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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