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2N5109 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

2N5109 Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Silicon NPN transistor, designed for VHF and UHF equipment.

2N5109 Applications

* include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 40 3

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MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation
Microsemi Corporation 2N5109-like datasheet