2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.
Silicon NPN transistor, designed for VHF and UHF equipment.

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Datasheet Specifications

Part number: 2N5179
Manufacturer: Microsemi ↗ Corporation
File Size: 165.35 KB
Datasheet: 2N5179_MicrosemiCorporation.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Applications

* ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 12 20 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data PD Total Device Dissipation @ TA = 25ºC Derate above 25ºC 300 1.71 mWatts mW/ ºC

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2N5179 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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