Datasheet Details
| Part number | 2N5031 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 83.37 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | 2N5031_MicrosemiCorporation.pdf |
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Overview: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER.
| Part number | 2N5031 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 83.37 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Datasheet | 2N5031_MicrosemiCorporation.pdf |
|
|
|
: General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1303.PDF 10-25-99 2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) 10 15 3.0 Value Typ.
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