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2N5031 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.

Key Features

  • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain.
  • 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1303.