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2N5031 Datasheet Rf & Microwave Discrete Low Power Transistors

Manufacturer: Advanced Power Technology

Overview: 140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER.

Datasheet Details

Part number 2N5031
Manufacturer Advanced Power Technology
File Size 125.59 KB
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet 2N5031_AdvancedPowerTechnology.pdf

General Description

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The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at .ADVANCEDPOWER.

Key Features

  • Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC Maximum Unilateral Gain.
  • 12 dB (typ) @ 400 MHz 1 4 2 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

2N5031 Distributor