2N5031 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N5031
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	146.39 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	2N5031 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N5032	HIGH FREQUENCY TRANSISTOR
2N5038	NPN SILICON TRANSISTORS
2N5039	NPN SILICON TRANSISTORS
2N502	PNP Transistor
2N5022	GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO •c PD TJ< Tstg Value 10 15 3.0 20 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.01 mAdc, El = 0) Emitter-Base Breakdown Voltage E(l = 0.01 mAdc, lc = 0) Collector Cutoff Current (Vcb = 6.