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2N5032 - HIGH FREQUENCY TRANSISTOR

Download the 2N5032 datasheet PDF. This datasheet also covers the 2N5031 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5031-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N5032 NPN SILICON RF SMALL SIGNAL TRANSISTORS ETC
2N5032 Bipolar NPN UHF/Microwave Transistor New Jersey Semi-Conductor
2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation
2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Advanced Power Technology
2N5034 Power Transistors RCA

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N5031 HIGH FREQUENCY TRANSISTOR
2N5038 NPN SILICON TRANSISTORS
2N5039 NPN SILICON TRANSISTORS
2N502 PNP Transistor
2N5022 GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO •c PD TJ< Tstg Value 10 15 3.0 20 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.01 mAdc, El = 0) Emitter-Base Breakdown Voltage E(l = 0.01 mAdc, lc = 0) Collector Cutoff Current (Vcb = 6.