Datasheet Summary
2N5031 2N5032
CASE 20-03, STYLE 10
TO-72 (TO-206AF)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
- Collector Current Continuous
Total Device Dissipation AT(a< = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
- c
TJ< Tstg
Value 10 15 3.0 20 200 1.14
- 65 to + 200
Unit
Vdc Vdc Vdc mAdc mW mW/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 0.01 mAdc, El = 0)
Emitter-Base Breakdown Voltage E(l = 0.01...
