2N5660 Datasheet, Transistor, Microsemi Corporation

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2N5660

Manufacturer:

Microsemi ↗ Corporation

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65.03kb

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📄 Datasheet

Description:

Npn power silicon transistor.

TAGS

2N5660

Microsemi Corporation

📁 Related Datasheet

2N5660 - Bipolar NPN Device (Seme LAB)
2N5660 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.

2N5660 - (2N5660 / 2N5661) Silicon NPN Power Transistors (SavantIC)
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TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAX.

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2N5661 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Herm.

2N5661 - Silicon NPN Transistor (Semicoa Semiconductor)
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5661J) • JANTX level (2N5661JX) • JA.

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2N5661 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) ·Minimum Lot-to-Lot variations for robust device .

2N5662 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAX.

2N5662 - Bipolar NPN Device (Seme LAB)
2N5662 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0..

2N5662 - Silicon NPN Transistor (Semicoa Semiconductor)
Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5662J) • JANTX level (2N5662JX) • JA.