2N5669, 2N5668 Datasheet - ETC

2N5669 SILICON N-CHANNEL JUNCTION FET

2N5668 (SILICON) 2N5669 2N5670 SILICON N CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications. Low Cross Modulation and Intermodulation Distortion Drain and Source Interchangeable Low 100-MHz Noise Figure - NF = 2.5 dB (Max) Low Reverse Transfer and Input Capcitances- Crss = 1.0 pF (Typ); Ciss =4.7 pF (Typ) High Maximum Stable Gain Due to Drain.

2N5668-ETC.pdf

2N5669 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N5669, 2N5668. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N5669, 2N5668

Manufacturer:

ETC

File Size:

124.38 KB

Description:

Silicon n-channel junction fet.

Note:

This datasheet PDF includes multiple part numbers: 2N5669, 2N5668.
Please refer to the document for exact specifications by model.

2N5669 Distributor

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TAGS

2N5669 2N5668 SILICON N-CHANNEL JUNCTION FET ETC