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2N5669 Datasheet - ETC

2N5669 SILICON N-CHANNEL JUNCTION FET

2N5668 (SILICON) 2N5669 2N5670 SILICON N CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications. Low Cross Modulation and Intermodulation Distortion Drain and Source Interchangeable Low 100-MHz Noise Figure - NF = 2.5 dB (Max) Low Reverse Transfer and Input Capcitances- Crss = 1.0 pF (Typ); Ciss =4.7 pF (Typ) High Maximum Stable Gain Due to Drain.

2N5669 Datasheet (124.38 KB)

2N5669 Datasheet Preview — Preview of 2N5669 PDF

Datasheet Details

Part number:

2N5669

Manufacturer:

ETC

File Size:

124.38 KB

Description:

Silicon n-channel junction fet.

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2N5669 SILICON N-CHANNEL JUNCTION FET ETC

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