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2N5669 - SILICON N-CHANNEL JUNCTION FET

This page provides the datasheet information for the 2N5669, a member of the 2N5668 SILICON N-CHANNEL JUNCTION FET family.

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Datasheet Details

Part number 2N5669
Manufacturer ETC
File Size 124.38 KB
Description SILICON N-CHANNEL JUNCTION FET
Datasheet download datasheet 2N5669 Datasheet
Additional preview pages of the 2N5669 datasheet.

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Full PDF Text Transcription

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2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications. • Low Cross Modulation and Intermodulation Distortion • Drain and Source Interchangeable • Low 100-MHz Noise Figure - NF = 2.5 dB (Max) • Low Reverse Transfer and Input Capcitances- Crss = 1.0 pF (Typ); Ciss =4.
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