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2N5636 - NPN SILICON RF POWER TRANSISTORS

This page provides the datasheet information for the 2N5636, a member of the 2N5635 NPN SILICON RF POWER TRANSISTORS family.

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Datasheet Details

Part number 2N5636
Manufacturer ETC
File Size 445.47 KB
Description NPN SILICON RF POWER TRANSISTORS
Datasheet download datasheet 2N5636 Datasheet
Additional preview pages of the 2N5636 datasheet.

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2N5635 (SILICON) 2N5636 2N5637 NPN SILICON RF POWER TRANSISTORS · .. designed for VHF/UHF amplifier applications. These devices are suitable for use in 28 volt systems to 470 MHz. These transistors are ideal for 225·400 MHz communications equipment. • Balanced Emitter Construction to provide the designer with the device technology that assures ruggedness and resists transistor damage caused by load mismatch. • Low inductance strip line packaging for easier and better broad· band designs. • Ceramic Package • Choice of Power Levels at 400 MHz. 28 Vdc 2N5635 - 2.5 Watts - 6.2 dB (Min) Gain 2N5636 - 7.5 Watts - 5.7 dB (Min) Gain 2N5637 - 20 Watts - 4.6 dB (Min) Gain *MAXIMUM RATINGS Rating Collector-Emitter Voltage Coliector·Ba..
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